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| MCR08B, MCR08M Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for line powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in surface mount package for use in automated manufacturing. Features http://onsemi.com * * * * * Sensitive Gate Trigger Current Blocking Voltage to 600 V Glass Passivated Surface for Reliability and Uniformity Surface Mount Package Pb-Free Packages are Available SCRs 0.8 AMPERES RMS 200 thru 600 VOLTS G A K MARKING DIAGRAM SOT-223 CASE 318E STYLE 10 1 AYW CR08x G G MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Peak Repetitive Off-State Voltage (Note 1) (Sine Wave, RGK = 1000 W TJ = 25 to 110C) MCR08BT1 MCR08MT1 On-State Current RMS (All Conduction Angles; TC = 80C) Peak Non-repetitive Surge Current (1/2 Cycle Sine Wave, 60 Hz, TC = 25C) Circuit Fusing Considerations (t = 8.3 ms) Forward Peak Gate Power (TC = 80C, t = 1.0 ms) Average Gate Power (TC = 80C, t = 8.3 ms) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM 200 600 IT(RMS) ITSM I2t PGM PG(AV) TJ Tstg 0.8 8.0 0.4 0.1 0.01 -40 to +110 -40 to +150 A A A2s W 1 W C C 2 3 4 Value Unit V 1 CR08x = Device Code x = B or M A = Assembly Location Y = Year W = Work Week G = Pb-Free Package (Note: Microdot may be in either location) PIN ASSIGNMENT Cathode Anode Gate Anode THERMAL CHARACTERISTICS Rating Thermal Resistance, Junction-to-Ambient PCB Mounted per Figure 1 Thermal Resistance, Junction-to-Tab Measured on Anode Tab Adjacent to Epoxy Maximum Device Temperature for Soldering Purposes (for 10 Seconds Maximum) Symbol RqJA RqJT TL Value 156 25 260 Unit C/W C/W C ORDERING INFORMATION Device MCR08BT1 MCR08BT1G MCR08MT1 MCR08MT1G Package SOT-223 SOT-223 (Pb-Free) SOT-223 SOT-223 (Pb-Free) Shipping 1000/Tape &Reel 1000/Tape &Reel 1000/Tape & Reel 1000/Tape & Reel Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant source such that the voltage ratings of the devices are exceeded. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2006 1 April, 2006 - Rev. 5 Publication Order Number: MCR08BT1/D MCR08B, MCR08M ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (Note 2) (VAK = Rated VDRM or VRRM, RGK = 1000 W TJ = 25C TJ = 110C ON CHARACTERISTICS Peak Forward On-State Voltage (Note 1) (IT = 1.0 A Peak) Gate Trigger Current (Continuous dc) (Note 3) (VAK = 12 Vdc, RL = 100 W) Holding Current (Note 3) (VAK = 12 Vdc, Initiating Current = 20 mA) Gate Trigger Voltage (Continuous dc) (Note 3) (VAK = 12 Vdc, RL = 100 W) DYNAMIC CHARACTERISTICS Critical Rate-of-Rise of Off State Voltage (Vpk = Rated VDRM, TC = 110C, RGK = 1000 W, Exponential Method) 2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%. 3. RGK = 1000 W is included in measurement. 4. RGK is not included in measurement. dv/dt 10 - - V/ms VTM IGT IH VGT - - - - - - - - 1.7 200 5.0 0.8 V mA mA V IDRM, IRRM - - - - 10 200 mA mA Symbol Min Typ Max Unit Voltage Current Characteristic of SCR Symbol VDRM IDRM VRRM IRRM VTM IH Parameter Peak Repetitive Off State Forward Voltage Peak Forward Blocking Current Peak Repetitive Off State Reverse Voltage Peak Reverse Blocking Current Peak On State Voltage Holding Current IRRM at VRRM + Current Anode + VTM on state IH Reverse Blocking Region (off state) 0.15 3.8 0.079 2.0 0.091 0.091 2.3 2.3 0.079 2.0 0.984 25.0 0.059 0.059 0.059 1.5 1.5 1.5 inches mm + Voltage IDRM at VDRM Forward Blocking Region (off state) Reverse Avalanche Region Anode - 0.244 6.2 0.096 2.44 0.059 1.5 0.096 2.44 0.059 1.5 0.472 12.0 0.096 2.44 BOARD MOUNTED VERTICALLY IN CINCH 8840 EDGE CONNECTOR. BOARD THICKNESS = 65 MIL., FOIL THICKNESS = 2.5 MIL. MATERIAL: G10 FIBERGLASS BASE EPOXY Figure 1. PCB for Thermal Impedance and Power Testing of SOT-223 http://onsemi.com 2 MCR08B, MCR08M IT, INSTANTANEOUS ON-STATE CURRENT (AMPS) 10 R JA , JUNCTION TO AMBIENT THERMAL RESISTANCE, ( C/W) 1.0 0.1 TYPICAL AT TJ = 110C MAX AT TJ = 110C MAX AT TJ = 25C 0 1.0 2.0 3.0 4.0 vT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) 0.01 160 150 140 130 120 110 100 90 80 70 60 50 40 30 TYPICAL MAXIMUM DEVICE MOUNTED ON FIGURE 1 AREA = L2 PCB WITH TAB AREA AS SHOWN L 4 L 123 MINIMUM FOOTPRINT = 0.076 cm2 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 FOIL AREA (cm2) Figure 2. On-State Characteristics Figure 3. Junction to Ambient Thermal Resistance versus Copper Tab Area 110 T A , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE ( C) 1.0 cm2 FOIL, 50 OR 60 Hz HALFWAVE 180 120 = 30 60 CONDUCTION ANGLE 110 100 T A , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE ( C) 90 80 70 60 50 40 30 20 0 0.1 = 30 60 90 50 OR 60 Hz HALFWAVE = CONDUCTION ANGLE 100 90 80 70 60 50 40 30 = dc dc 180 120 90 0.2 0.3 0.4 0.5 20 0 0.1 0.2 0.3 0.4 0.5 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) IT(AV), AVERAGE ON-STATE CURRENT (AMPS) Figure 4. Current Derating, Minimum Pad Size Reference: Ambient Temperature 110 T A , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE ( C) 100 90 80 70 60 50 ANGLE Figure 5. Current Derating, 1.0 cm Square Pad Reference: Ambient Temperature 110 dc T(tab) , MAXIMUM ALLOWABLE TAB TEMPERATURE ( C) 50 OR 60 Hz HALFWAVE 180 = 30 60 90 120 dc PAD AREA = 4.0 cm2, 50 OR 60 Hz HALFWAVE 180 = 30 60 90 120 = CONDUCTION ANGLE = CONDUCTION 0 0.1 0.2 0.3 0.4 0.5 85 0 0.1 0.2 0.3 0.4 0.5 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) IT(AV), AVERAGE ON-STATE CURRENT (AMPS) Figure 6. Current Derating, 2.0 cm Square Pad Reference: Ambient Temperature Figure 7. Current Derating Reference: Anode Tab http://onsemi.com 3 MCR08B, MCR08M 1.0 0.9 MAXIMUM AVERAGE POWER P(AV),DISSIPATION (WATTS) 0.8 = 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.1 0.2 0.3 0.4 0.5 120 180 dc CONDUCTION ANGLE 1.0 = 30 60 90 r T , TRANSIENT THERMAL RESISTANCE NORMALIZED 0.1 0.01 0.0001 0.001 0.01 0.1 1.0 10 100 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) t, TIME (SECONDS) Figure 8. Power Dissipation Figure 9. Thermal Response Device Mounted on Figure 1 Printed Circuit Board VGT , GATE TRIGGER VOLTAGE (VOLTS) 0.7 VAK = 12 V RL = 100 W 2.0 VAK = 12 V RL = 3.0 kW 0.5 0.4 I H , HOLDING CURRENT (NORMALIZED) 110 0.6 1.0 0.3 -40 -20 0 20 40 60 80 0 -40 -20 0 20 40 60 80 110 TJ, JUNCTION TEMPERATURE, (C) TJ, JUNCTION TEMPERATURE, (C) Figure 10. Typical Gate Trigger Voltage versus Junction Temperature Figure 11. Typical Normalized Holding Current versus Junction Temperature 0.7 V GT , GATE TRIGGER VOLTAGE (VOLTS) 0.65 0.6 1000 I GT , GATE TRIGGER CURRENT ( A) RGK = 1000 W, RESISTOR CURRENT INCLUDED 0.55 0.5 VAK = 12 V RL = 100 W TJ = 25C 100 VAK = 12 V RL = 100 W 10 WITHOUT GATE RESISTOR 0.45 0.4 0.35 0.3 0.1 1.0 10 100 1000 1.0 -40 -20 0 20 40 60 80 110 IGT, GATE TRIGGER CURRENT (mA) TJ, JUNCTION TEMPERATURE (C) Figure 12. Typical Range of VGT versus Measured IGT Figure 13. Typical Gate Trigger Current versus Junction Temperature http://onsemi.com 4 MCR08B, MCR08M 100 TJ = 25C 10 IGT = 48 mA 10000 5000 IH , HOLDING CURRENT (mA) 1000 STATIC dv/dt (V/ S) 500 100 50 10 5.0 1.0 0.5 0.1 1.0 10 100 1000 10,000 100,000 0.1 10 100 1000 125 110 75 10,000 100,000 50 TJ = 25 Vpk = 400 V IGT = 7 mA 1.0 RGK, GATE-CATHODE RESISTANCE (OHMS) RGK, GATE-CATHODE RESISTANCE (OHMS) Figure 14. Holding Current Range versus Gate-Cathode Resistance Figure 15. Exponential Static dv/dt versus Junction Temperature and Gate-Cathode Termination Resistance 10000 1000 STATIC dv/dt (V/ S) 500 100 50 400 V 300 V 200 V 100 V 10000 TJ = 110C 1000 STATIC dv/dt (V/ S) 500 100 50 10 5.0 RGK = 1.0 k RGK = 100 TJ = 110C 400 V (PEAK) 50 V 500 V 10 5.0 1.0 10 100 1000 10,000 1.0 0.01 RGK = 10 k 0.1 1.0 10 100 CGK, GATE-CATHODE CAPACITANCE (nF) RGK, GATE-CATHODE RESISTANCE (OHMS) Figure 16. Exponential Static dv/dt versus Peak Voltage and Gate-Cathode Termination Resistance Figure 17. Exponential Static dv/dt versus Gate-Cathode Capacitance and Resistance 10000 1000 STATIC dv/dt (V/ S) 500 100 50 10 5.0 1.0 10 IGT = 15 mA 100 1000 10,000 100,000 GATE-CATHODE RESISTANCE (OHMS) IGT = 5 mA IGT = 70 mA IGT = 35 mA Figure 18. Exponential Static dv/dt versus Gate-Cathode Termination Resistance and Product Trigger Current Sensitivity http://onsemi.com 5 MCR08B, MCR08M PACKAGE DIMENSIONS SOT-223 (TO-261) CASE 318E-04 ISSUE L D b1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. MILLIMETERS NOM MAX 1.63 1.75 0.06 0.10 0.75 0.89 3.06 3.20 0.29 0.35 6.50 6.70 3.50 3.70 2.30 2.40 0.94 1.05 1.75 2.00 7.00 7.30 10 - INCHES NOM 0.064 0.002 0.030 0.121 0.012 0.256 0.138 0.091 0.037 0.069 0.276 - 4 HE 1 2 3 E b e1 e q C DIM A A1 b b1 c D E e e1 L1 HE q MIN 1.50 0.02 0.60 2.90 0.24 6.30 3.30 2.20 0.85 1.50 6.70 0 MIN 0.060 0.001 0.024 0.115 0.009 0.249 0.130 0.087 0.033 0.060 0.264 0 MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 0.078 0.287 10 A 0.08 (0003) A1 L1 STYLE 10: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE SOLDERING FOOTPRINT* 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 mm inches SCALE 6:1 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 MCR08BT1/D |
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